a p60n03gs/p-hf advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v fast switching characteristic r ds(on) 13.5m simple drive requirement i d 55a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 2 /w rthj-a 40 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice storage temperature range total power dissipation 62.5 -55 to 150 operating junction temperature range -55 to 150 drain current, v gs @ 10v 35 pulsed drain current 1 215 gate-source voltage + 20 drain current, v gs @ 10v 55 parameter rating drain-source voltage 30 halogen-free product 1 201409031 parameter thermal data maximum thermal resistance, junction-ambient (pcb mount) 3 g d s a p60n03 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. the through-hole version (ap60n03p) are available for low-profile applications. g d s to-263(s) g d to-220(p) s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =28a - - 13.5 m v gs =4.5v, i d =22a - - 20 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =28a - 30 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source forward leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =28a - 23 - nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =5v - 14 - nc t d(on) turn-on delay time v ds =15v - 8 - ns t r rise time i d =28a - 81 - ns t d(off) turn-off delay time r g =3.3 -24- ns t f fall time v gs =10v - 18 - ns c iss input capacitance v gs =0v - 950 - pf c oss output capacitance v ds =25v - 440 - pf c rss reverse transfer capacitance f=1.0mhz - 145 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 55 a i sm pulsed source current ( body diode ) 1 - - 215 a v sd forward on voltage 2 t j =25 , i s =55a, v gs =0v - - 1.3 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap60n03gs/p-hf 3.surface mounted on 1 in 2 copper pad of fr4 board .
ap60n03gs/p-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =28a v g =10v 10 12 14 16 18 20 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =28a t c =25 o c 0 50 100 150 200 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v v g =4.0v 0 50 100 150 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 10v 8.0v 6.0v 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) .
ap60n03gs/p-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =16v v ds =20v v ds =24v i d =28a 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c oss c rss c iss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge .
ap60n03gs/p-hf marking information to-263 to-220 5 part numbe r package code meet rohs requirement for low voltage mosfet only date code (ywwsss) y last digit of the year ww week sss sequence 60n03gs ywwsss part numbe r package code meet rohs requirement for low voltage mosfet only 60n03gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence .
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